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     2002 May 06 2 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PMEG3002AEB FEATURES ? Forward current: 0.2 A ? Reverse voltage: 30 V ? Very low forward voltage ? Ultra small SMD package. APPLICATIONS ? Ultra high-speed switching ? High efficiency DC/DC conversion ? Voltage clamping ? Inverse-polarity protection ? Low voltage rectification ? Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode , 4 columns 12 MGU328 Fig.1 Simplified outline (SOD523; SC-79) and symbol. Marking code: B1. The marking bar indicates the cathode. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage ? 30 V IF continuous forward current ? 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 ? 300 mA IFSM non-repetitive peak forward current tp = 8.3 ms half sinewave; JEDEC method ? 1 A Tstg storage temperature ?65 +150 °C Tj junction temperature ? 125 °C Tamb operating ambient temperature ?65 +125 °C |